Transitivity of the band offsets in II-VI/III-V heterojunctions

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 178-182

  Rubini, S ^a   Milocco, E ^a   Sorba, L ^a,b   Franciosi, A ^a,c  

^a LABORATORIO TASC   (Italy)

^b Istituto ICMAT del CNR   (Italy)

^c UNIVERSITY OF TRIESTE   (Italy)

Author keywords

Band offsets; Heterovalent heterojunctions

Indexed keywords

EID: 4243227187     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80317-5     Document Type: Article

References (18)

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16. We caution the reader that growth on Ze- or Se-pretreated surfaces is not equivalent to growth with high or low BPR, as far as the growth mode is concerned. For example, while it is true that ZnSe growth on Se-pretreated surfaces gives rise to 3D growth, we have shown that growth under Se overpressure leads to 2D growth. See S. Heun, J.J. Paggel, L. Sorba, S. Rubini, A. Franciosi, J.-M. Bonard, J.-D. Ganiere, J. Vac. Sci. Technol. B 15 (1997) 1279.
17. For details and a discussion of the method see, for instance, Ref. [7].
18. v (GaAs/AlAs) = 0.46 ± 0.03 eV were reported, in agreement with most of the literature data.