Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

Thin Solid Films

Volumn 298, Issue 1-2, 1997, Pages 187-190

  Kim, T W ^a   Jung, M ^a   Lee, D U ^a   Oh, E ^b   Lee, S D ^b   Jung, H D ^b   Kim, M D ^b   Kim, J R ^b   Park, H S ^b   Lee, J Y ^c  

^a Kwangwoon University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Gallium arsenide; Molecular beam epitaxy (MBE); Optical properties; Surface structure

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE STRUCTURE;

DOUBLE CRYSTAL X RAY LOCKING CURVE (DCRC); LATTICE MISMATCH;

HETEROJUNCTIONS;

EID: 0031122408     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09323-6     Document Type: Article

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