71.8 GHz static frequency divider in a SiGe bipolar technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 216-219

  Wurzer, Martin ^a   Böck, Josef ^a   Knapp, Herbert ^a   Aufinger, Klaus ^a   Meister, Thomas F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC LINES; FIELD EFFECT TRANSISTORS; FREQUENCY SYNTHESIZERS; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL FIBERS;

DOUBLE-STAGE EMITTERS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0036437983     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T. Mathew, H.-J. Kim, D. Scott, S. Jaganathan, S. Krishnan, Y. Wei, M. Urteaga, S. Long, and M.J.W. Rodwell, "75 GHz ECL static frequency divider using InAlAs/InGas HBTs," IEE Electronics Letters, vol. 37, no. 11, pp. 667-668, May 2001.
2. M. Sokolich, C. Fields, B. Shi, Y.K. Brown, M. Montes, R. Martinez, A.R. Kramer, S. Thomas III, and M. Madhav, "A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology," IEEE GaAs IC Symposium Technical Digest, Seattle, WA, USA, Nov. 2000, pp. 81-84.
3. E. Ohue, R. Hayami, K. Oda, H. Shimamoto, and K. Washio, "5.3-ps ECL and 71-GHz Static Frequency Divider in Self-Aligned SEG SiGe HBT," Procceedings of the IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, USA, Sept. 2001, pp. 26-29.
4. K. Washio, R. Hayami, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, and M. Kondo, "67-GHz Static Frequency Divider Using 0.2-μm Self-Aligned SiGe HBTs," IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 1, pp. 3-8, Jan. 2001.
5. H.-M. Rein and M. Möller, "Design Considerations for Very-High-Speed Si-Bipolar IC's Operating up to 50 Gb/s," IEEE Journal of Solid-State Circuits, vol. 31, no. 8, pp. 1076-1090, Aug. 1996.
6. J. Böck, H. Schäfer, H. Knapp, D. Zöschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, and T.F. Meister, "High-Speed SiGe:C Bipolar Technology," IEEE International Electron Devices Meeting Technical Digest, Washington, DC, USA, Dec. 2001, pp. 344-347.