Effects of stress on the interfacial reactions of metal thin films on (0 0 1)Si

Thin Solid Films

Volumn 424, Issue 1, 2003, Pages 33-39

  Cheng, S L ^a   Lo, H M ^a   Cheng, L W ^a   Chang, S M ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Amorphous interlayer; Auto correlation function; Silicides; Stress

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); METALLIC FILMS; SILICON; SURFACE REACTIONS; TENSILE STRESS;

AMORPHOUS INTERLAYERS;

THIN FILMS;

EID: 0037460392     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00902-1     Document Type: Conference Paper

References (17)

1. Shen Y.L., Suresh S., Blench I.A. J. Appl. Phys. 80:1996;1388.
2. Yew J.Y., Chen L.J., Wu W.F. J. Vac. Sci. Technol. B. 17:1999;939.
3. Yew J.Y., Chen L.J., Nakamura K. Appl. Phys. Lett. 69:1996;999.
4. Hsu H.F., Chen L.J., Chu J.J. J. Appl. Phys. 69:1991;4282.
5. Chang C.S., Nieh C.W., Chen L.J. Appl. Phys. Lett. 50:1987;259.
6. Colgan E.G., Gambino J.P., Hong Q.Z. Mater. Sci. Eng. R. 16:1996;43.
7. Lasky J.B., Nakos J.S., Cain O.J., Geiss P.J. IEEE Trans. Electron Devices. ED-38:1991;262.
8. Chang S.M., Huang H.Y., Yang H.Y., Chen L.J. Appl. Phys. Lett. 74:1999;224.
9. Tung R.T., Fujii K., Kikuta K., Chikaki S., Kikkawa T. Appl. Phys. Lett. 70:1997;2386.
10. Liang J.M., Chen L.J. Appl. Phys. Lett. 64:1994;1224.
11. Liang J.M., Chen L.J. J. Appl. Phys. 79:1996;4072.
12. Chen L.J., Lin J.H., Lee T.L., Luo C.H., Hsieh W.Y., Liang J.M., Wang M.H. Micros. Res. Tech. 40:1998;136.
13. Chen J.C., Shen G.H., Chen L.J. J. Appl. Phys. 83:1998;7653.
14. Chen L.J. Mater. Sci. Eng. R. 29:2000;115.
15. Murarka S.P. Metallization: Theory and Practice for VLSI and ULSI. 1993;74 Butterworth-Heinemann, Boston, MA.
16. Shewmon P.G. Diffusion in Solid. second ed. 1989;84 The Metallurgical Society, Warrendale, PA.
17. Tan T.Y., Goesele U. Appl. Phys. A. 31:1985;1.