High resolution electron microscopy of amorphous interlayers between metal thin films and silicon

Microscopy Research and Technique

Volumn 40, Issue 2, 1998, Pages 136-151

  Chen, L J ^a   Lin, J H ^a   Lee, T L ^a   Luo, C H ^a   Hsieh, W Y ^a   Liang, J M ^a   Wang, M H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Auto correlation function analysis; Growth kinetics; Solid state diffusion; Stability; Structure

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CRYSTAL STRUCTURE; DIFFUSION IN LIQUIDS; DIFFUSION IN SOLIDS; FAST FOURIER TRANSFORMS; HIGH RESOLUTION ELECTRON MICROSCOPY; REFRACTORY METALS; SILICIDES; SILICON WAFERS; SINGLE CRYSTALS; THIN FILMS;

AMORPHOUS INTERLAYERS; AUTO- CORRELATION FUNCTION ANALYSE; AUTOCORRELATION FUNCTIONS; FUNCTION ANALYSIS; LINEAR LAW; METAL THIN FILM; POLYCRYSTALLINE METALS; SI ATOMS; SINGLE CRYSTAL SILICON; SOLID-STATE DIFFUSION;

GROWTH KINETICS;

METAL; SILICON;

ARTICLE; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; FOURIER TRANSFORMATION; IMAGE RECONSTRUCTION; PRIORITY JOURNAL; STRUCTURE ANALYSIS;

EID: 0032518554     PISSN: 1059910X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0029(19980115)40:2<136::AID-JEMT5>3.0.CO;2-T     Document Type: Article

References (25)

1. Abelson, J.R., Kim, K.B., Mercer, D.E., Helms, C.R., Sinclair, R., and Sigmon, T.W. (1988) Disordered intermixing at the platinum-silicon interface demonstrated by high resolution cross-sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channeling. J. Appl. Phys., 63:689-692.
2. Chen, L.J., Hsieh, W.Y., Lin, J.H., Lee, T.L., Chen, J.F., Liang, J.M., and Wang, M.H. (1994) Solid state amorphization in silicide-forming system. In: Mater. Res. Soc. Symp. Proc., 320:343-354.
3. Cheng, J.Y., and Chen, L.J. (1990) Growth kinetics of amorphous interlayers by solid-state diffusion in Zr/Si and Hf/Si systems. J. Appl. Phys., 68:4002-4007.
4. Cheng, J.Y., and Chen, L.J. (1991) Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited Nb and Ta thin films on (111)Si. J. Appl. Phys., 69:2161-2168.
5. Fan, G.Y., and Cowley, J.M. (1985) Auto-correlation function analysis of high resolution electron micrographs of near-amorphous thin films. Ultramicroscopy, 17:345-355.
6. Frank, J. (1980) The role of correlation techniques in computer image processing. In: Computer Processing of Electron Microscope Images. P.W. Hawkes, ed. Springer, Berlin, pp. 187-222.
7. Herd, S.R., Tu, K.N., and Ahn, K.Y. (1983) Formation of an amorphous Rh-Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films. Appl. Phys. Lett., 42:597-599.
8. Holloway, K., and Sinclair, R. (1987) Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline multilayer film. J. Appl. Physiol., 61:1359-1364.
9. Hsieh, W.Y., Lin, J.H., and Chen, L.J. (1993) Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si. Appl. Phys. Lett., 62:1088-1090.
10. Johnson, W.L. (1988) Thermodynamic and kinetic aspects of the crystal to glass transformation in metallic materials. Progr. Mat Sci., 30:81-134.
11. Lee, T.L., and Chen, L.J. (1993) Interfacial reactions in ultrahigh vacuum deposited Y thin films on atomically clean (111)Si. J. Appl. Physiol., 73:8258-8266.
12. Lee, T.L., and Chen, L.J. (1994) Interfacial reactions in ultrahigh vacuum deposited Y-Si multilayer thin films. J. Appl. Phys., 75:2007-2014.
13. Liang, J.M., and Chen, L.J. (1994) Auto-correlation analysis for the determination of the structure of amorphous interlayers in ultrahigh vacuum deposited molybdenum thin films on silicon. Appl. Phys. Lett., 64:1224-1226.
14. Liauh, H.R., Chen, M.C., Chen, J.F., and Chen, L.J. (1993) Electrical and microstructural characteristics of Ti contacts on (001)SI. J. Appl. Phys., 74:2590-2597.
15. Lin, J.H., and Chen, L.J. (1995) Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited V thin films on (001)Si. J. Appl. Phys., 77:4425-4430.
16. Lin, J.H., and Chen, L.J. (1996) The determination of average concentration of amorphous interlayer in the V/Si system with an ultrathin oxide layer and capping Mo layer as reference planes. Appl. Surf. Sci., 92:340-344.
17. Lin, J.H., Hsieh, W.Y., and Chen, L.J. (1996) Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited V and Zr thin films on (111)Si. J. Appl. Phys. (in press).
18. Lur, W., and Chen, L.J. (1989) Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin film and single-crystal silicon. Appl. Phys. Lett., 54:1217-1219.
19. Miedema, A.R., Buschow, K.H.J., and van Mal, H.H. (1976) Which intermetallic compounds of transition metals form stable hydrides. J. Less-Common Metals, 49:463-472.
20. Nicolet, M.A., and Lau, S.S. (1983) Formation and characterization of transition-metal silicides. In: Materials and Process Characterization. N.G. Einspruch and G.R. Larrabee, eds. Academic Press, New York, pp. 329-464.
21. Sinclair, R., and Konno, T.J. (1993) Reactions in metal-metalloid multilayers. Mater. Res. Soc. Symp. Proc., 311:3-8.
22. Tu, K.N., and Mayer, J.W. (1978) Silicide formation. In: Thin Films-Interdiffusion and Reactions. J.M. Poate, K.N. Tu, and J.W. Mayer, eds. Wiley, New York, pp. 359-405.
23. Tu, K.N., Herd, S.R., and Goesele, U. (1991) Metastability in slow thin-film reactions. Phys. Rev., B43:1198-1201.
24. Walser, R.M., and Bene, R.W. (1976) First phase nucleation in silicon-transition-metal planar interface. Appl. Phys. Lett., 28:624-625.
25. Wang, M.H., and Chen, L.J. (1992) Phase formation in ultrahigh vacuum deposited titanium thin films on silicon. J. Appl. Phys., 71:5918-5925.