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Volumn 68, Issue 8, 1996, Pages 1111-1113

Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two-dimensional electron gas mobilities

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001083922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115729     Document Type: Article
Times cited : (51)

References (20)
  • 4
    • 0029217069 scopus 로고    scopus 로고
    • Y. Sugiyama, K. Sano, S. Uekusa, and T. Nakagawa, Proceedings of 7th International Conference on InP and Related Materials, Sapporo, Japan, 1995 (Institute of Electrical and Electronics Engineers, 1995), p. 217.
    • Y. Sugiyama, K. Sano, S. Uekusa, and T. Nakagawa, Proceedings of 7th International Conference on InP and Related Materials, Sapporo, Japan, 1995 (Institute of Electrical and Electronics Engineers, 1995), p. 217.
  • 15
    • 21544480644 scopus 로고    scopus 로고
    • J. R. Hayes, A. R. Adams, and P. D. Greene, GaInAsP Alloy Semiconductors, edited by T. P. Pearsal (Wiley, New York, 1982).
    • J. R. Hayes, A. R. Adams, and P. D. Greene, GaInAsP Alloy Semiconductors, edited by T. P. Pearsal (Wiley, New York, 1982).
  • 20
    • 21544466779 scopus 로고    scopus 로고
    • G. Snider, 1D Poisson/Schrödinger, Electronic mail: snider@msc.cornell.edu (1993).
    • G. Snider, 1D Poisson/Schrödinger, Electronic mail: snider@msc.cornell.edu (1993).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.