A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 117-122

  Valletta, A ^a   Mariucci, L ^a   Pecora, A ^a   Fortunato, G ^a   Ayres, J R ^b   Brotherton, S D ^b  

^a IFN CNR   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Hot carrier effects; Polycrystalline silicon; Thin film transistors

Indexed keywords

ELECTRIC FIELDS; HOT CARRIERS; POLYSILICON; SEMICONDUCTOR DOPING; STRESS ANALYSIS;

LIGHTLY DOPED DRAIN (LDD);

THIN FILM TRANSISTORS;

EID: 0037416625     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01155-0     Document Type: Conference Paper

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