Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices

Applied Physics Letters

Volumn 82, Issue 9, 2003, Pages 1329-1331

  Reddy, M H M ^a   Buell, D A ^a   Huntington, A S ^a   Asano, T ^a   Koda, R ^a   Feezell, D ^a   Lofgreen, D ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; LEAKAGE CURRENTS; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE;

NONRADIATIVE RECOMBINATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037416522     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1554485     Document Type: Article

References (8)

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