Increased lateral oxidation rates of AlInAs on InP using short-period superlattices

Journal of Electronic Materials

Volumn 29, Issue 9, 2000, Pages 1100-1104

  Hall, E ^a   Huntington, A ^a   Naone, R L ^a   Kroemer, H ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRENGTH; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; OXIDATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ARSENIDE; ALUMINUM INDIUM ARSENIDE; INDIUM ARSENIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034275068     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0271-y     Document Type: Article

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