Investigation of the electrical degradation of a metal-oxide-silicon capacitor by scanning thermal microscopy

Solid-State Electronics

Volumn 47, Issue 5, 2003, Pages 919-922

  Gomes S ^a   Ziane, Dj ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

Electric degradation; Hot spots; MOS structure; Scanning thermal microscopy

Indexed keywords

ELECTRIC LOSSES; MICROELECTRONICS; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES; TEMPERATURE DISTRIBUTION;

SCANNING THERMAL MICROSCOPY;

MOS CAPACITORS;

EID: 0037406954     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00451-3     Document Type: Article

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