Front- and backside investigations of thermal and electronic properties of semiconducting devices

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 937-940

  Fiege, G B M ^a   Schade, W ^a   Palaniappan, M ^b   Ng, V ^b   Phang, J C H ^b   Balk, L J ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON MICROSCOPY; ELECTRONIC PROPERTIES; HOT CARRIERS; THERMODYNAMIC PROPERTIES;

PHOTON EMISSION MICROSCOPE; SCANNING THERMAL MICROSCOPE; THERMAL CHARACTERIZATION;

SEMICONDUCTOR DEVICE TESTING;

EID: 0033145327     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00126-2     Document Type: Article

References (6)

1. th IPFA (1995), 60-65.
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3. th IPFA (1997) 1-6
4. Fiege G.B.M., Feige V., Phang J.C.H, Maywald M., Görlich S., Balk L.J. Failure analysis of integrated devices by Scanning Thermal Microscopy (SThM). Microelectron. Reliab. 38 (1998), 957-961
5. nd ISTFA (1996) 9-17
6. Rasras M., De Wolf I., Bender H., Groeseneken G., Maes H.E., Vanheverbeke S., De Pauw P. Analysis of Iddq failures by spectral photon emission microscopy. Microelectron. Reliab. 38 (1998), 877-882