Elimination of square pits on SIMOX wafer by using nitrogen-doped Cz crystal

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 18-19

  Hamaguchi, Isao ^a   Mizutani, Toshiyuki ^a   Kawamura, Keisuke ^a   Sasaki, Tsutom ^a   Takayama, Seiji ^a   Nagatake, Yoichi ^a   Ikari, Atushi ^a   Matsumura, Atsuki ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; LSI CIRCUITS; NITROGEN; SEMICONDUCTOR DOPING; SILICON WAFERS; THERMOOXIDATION;

GATE OXIDE INTEGRITY (GOI); INTERNAL THERMAL OXIDATION (ITOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034471245     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)