Gate oxide integrity on ITOX-SIMOX wafers

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 162-163

  Kawamura, K ^a   Deai, H ^a   Morikawa, Y ^a   Sakamoto, H ^a   Yano, T ^a   Hamaguchi, I ^a   Takayama, S ^a   Nagatake, Y ^a   Matsumura, A ^a   Tachimori, M ^a   Nakashima, S ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; THERMOOXIDATION; VOLTAGE MEASUREMENT;

GATE OXIDE INTEGRITY; HIGH TEMPERATURE OXIDATION (HTO); INTERNAL THERMAL OXIDE (ITOX);

SILICON WAFERS;

EID: 0030415274     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)