N-K ELNES study of anisotropy effects in hexagonal AlN

Journal of Microscopy

Volumn 210, Issue 1, 2003, Pages 60-65

  Radtke, Guillaume ^a   Epicier, T ^a   Bayle Guillemaud, P ^b   Le Bosse J C ^a  

^a UNIVERSITÉ DE LYON   (France)

^b CEA GRENOBLE   (France)

Author keywords

Ab initio calculations; Aluminium nitride; Anisotropic effects; EELS; ELNES

Indexed keywords

ANISOTROPY; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; III-V SEMICONDUCTORS; MOMENTUM; MOMENTUM TRANSFER; NITRIDES;

AB INITIO CALCULATIONS; ANISOTROPIC EFFECTS; ANISOTROPY EFFECT; COLLECTION ANGLE; ELECTRON ENERGY-LOSS SPECTROSCOPIES; ENERGY LOSS NEAR EDGE STRUCTURE; EXPERIMENTAL SPECTRA; HEXAGONAL ALUMINUM NITRIDES; INCIDENT ELECTRON BEAMS; LINEAR COMBINATIONS;

ALUMINUM NITRIDE;

ALUMINUM DERIVATIVE; ALUMINUM NITRIDE; UNCLASSIFIED DRUG;

AB INITIO CALCULATION; ANISOTROPY; CONFERENCE PAPER; ELECTRON BEAM; ELECTRON ENERGY LOSS SPECTROSCOPY; EXTRACTION; MEASUREMENT; MODEL; PRIORITY JOURNAL; SIGNAL NOISE RATIO; SIMULATION;

ANGUILLIFORMES;

EID: 0037392249     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2003.01178.x     Document Type: Conference Paper

References (16)

1. Blaha, P., Schwarz, K. & Luitz, J. (1999) WIEN97, a Full Potential Linearized Augmented. Plane Wave Package for Calculating Crystal Properties (Computer Program). Karlheinz Schwarz Techn. Universität, Wien, Austria.
2. Botton, G.A., Boothroyd, C.B. & Stobbs, W.M. (1995) Momentum dependent energy loss near edge structures using a CTEM: the reliability of the methods available. Ultramicroscopy, 59, 93-107.
3. Browning, N.D., Yuan, J. & Brown, L.M. (1991) Real-space determination of anistropic electronic structure by electron energy loss spectroscopy. Ultramicroscopy, 38, 291-298.
4. Cazaux, J. (1970) Anisotropie des oscillations de plasma dans le nitrure de bore. Application à la détermination des transitions interbandes. C. R. Acad. Sc. Paris, série B. t.270, 700-703.
5. 1-x N alloys. Phys. Rev. B. 58, 1928-1933.
6. 5. Phys. Rev. B. 61, 2587-2594.
7. Hébert-Souche, C., Louf, P.-H., Blaha, P., Nelhiebel, M., Luitz, J., Schattschneider, P., Schwarz, K. & Jouffrey, B. (2000) The orientation-dependent simulation of ELNES. Ultramicroscopy, 83, 9-16.
8. Lawniczak-Jablonska, K., Suski, T., Gorczyca, I., Christensen, N.E., Attenkofer, K.E., Perera, R.C.C., Gullikson, E.M., Underwood, J.H., Ederer, D.L. & Liliental Weber, Z. (2000) Electronic states in valence and conduction bands of group-III nitrides: experiment and theory. Phys. Rev. B. 61, 16623-16632.
9. Leapman, R.D., Fejes, P.L. & Silcox, J. (1983) Orientation dependence of core edges from anisotropic materials determined by inelastic scattering of fast electrons. Phys. Rev. B,. 28, 2361-2373.
10. MacKenzie, M. & Craven, A.J. (2000) Quantifying the oxidation of AIN using electron energy loss spectroscopy. J. Phys. D: Appl. Phys. 33, 1647-1655.
11. Menon, N.K. & Yuan, J. (1998) Quantitative analysis of the effect of probe convergence on electron energy loss spectra of anisotropic materials. Ultramicroscopy, 74, 83-94.
12. Moreau, P. & Cheynet, M.C. (2003) Improved comparison of low energy loss spectra with band structure calculations: the example of BN filaments. Ultramicroscopy, 94, 293-303.
13. Muller, D.A., Singh, D.J. & Silcox, J. (1998) Connections between the electron-energy-loss spectra, the local electronic structure, and the physical properties of a material: a study of nickel aluminum alloys. Phys. Rev. B, 57, 8181-8202.
14. Paxton, A.T., Van Schilfgaarde, M., MacKenzie, M. & Craven, A.J. (2000) The near-edge structure in energy-loss spectroscopy: many-electron and magnetic effects in transition metal nitrides and carbides. J. Phys. Condens. Matter, 12, 729-750.
15. Serin, V., Colliex, C., Brydson, R., Matar, S. & Boucher, F. (1998) EELS investigation of the electron conduction-band states in wurtzite AIN and oxygen-doped AIN (O). Phys. Rev. B, 58, 5106-5115.
16. Souche, C., Jouffrey, B., Hug, G. & Nelhiebel, M. (1998) Orientation sensitive EELS-analysis of boron nitride nanometric hollow spheres. Micron, 29, 419-424.