Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 3990-3994

  Hastas, N A ^a   Dimitriadis, C A ^a   Dozsa, L ^b   Gombia, E ^c   Amighetti, S ^c   Frigeri, P ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

NOISE MEASUREMENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037391015     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559412     Document Type: Article

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