Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications

Proceedings of the IEEE

Volumn 85, Issue 11, 1997, Pages 1694-1714

  Cheng, K Y ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Materials science and technology; Quantum well devices; Semiconductor growth; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Vacuum technology

Indexed keywords

CRYSTAL GROWTH; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; VACUUM TECHNOLOGY;

QUANTUM CASCADE LASERS; SURFACE EMITTING LASERS;

MOLECULAR BEAM EPITAXY;

EID: 0031269481     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.649646     Document Type: Article

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