Electronic configuration of the gallium and arsenic vacancies in GaAs

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 646-647

  Carlone, Cosmo ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

GaAs; Optical detection; Vacancies

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC STRUCTURE; IRRADIATION; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

ARSENIC VACANCY; GALLIUM VACANCY; OPTICAL DETECTION;

CRYSTAL DEFECTS;

EID: 0031164441     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(96)00188-3     Document Type: Article

References (3)

1. A. Jorio, A. Wang, M. Parenteau, C. Carlone, N.L. Rowell and S. M. Khanna, Phys. Rev. B 50 (1994) 1557.
2. D. Pons and J.C. Bourgoin, J. Phys. C 18 (1985) 3839.
3. D. Stievenard, X. Boddaert and J.C. Bourgoin, Phys. Rev. B 34 (1986) 4048.