Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature

Applied Physics Letters

Volumn 74, Issue 3, 1999, Pages 380-382

  Kim, T W ^a   Bae, H C ^b   Park, H L ^b  

^a Kwangwoon University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INDIUM ANTIMONIDE; LATTICE MISMATCH; REFLECTANCE MEASUREMENT; TEMPERATURE GRADIENT VAPOR DEPOSITION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033579744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123077     Document Type: Article

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