Optical and electrical properties of nitrogen ion implanted fluorine doped tin oxide films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 201, Issue 4, 2003, Pages 581-588

  Tesfamichael, Tuquabo ^a   Will, Geoffrey ^a   Colella, Michael ^b   Bell, John ^a  

^a QUEENSLAND UNIVERSITY OF TECHNOLOGY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Electrical properties; Ion implantation; Microstructure; Optical properties; Tin oxide

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; FLUORINE; ION IMPLANTATION; MATHEMATICAL MODELS; MICROSTRUCTURE; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

IMPLANTATION ENERGY;

SEMICONDUCTING FILMS;

EID: 0037377472     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)02226-7     Document Type: Article

References (32)

1. Frank G., Kauer E., Köstlin H., Schmitte F.J. Sol. Energy Mater. 8:1983;387.
2. Carroll A.F., Slack L.H. J. Electrochem. Soc. 123:1976;1879.
3. Ma H.L., Zhang D.H., Chen Y.P., Li S.Y., Ma J., Zong F.J. Thin Solid Films. 298:1997;151.
4. Chopra K.L., Major S., Pandya D.K. Thin Solid Films. 102:1983;1.
5. Aitchinson R. Aust. J. Appl. Sci. 5:1954;10.
6. Fischer A. Z. Naturforsch. A. 9:1954;508.
7. Arai T. J. Phys. Soc. Jpn. 15:1960;916.
8. Peaker A.R., Horsley B. Rev. Sci. Instr. 42:1971;1825.
9. Aloaf J.A., Marcotte V.C., Chou N.J. J. Electrochem. Soc. 120:1973;701.
10. Rohatgi A., Vinerito T.R., Slack L.H. J. Am. Ceram. Soc. 57:1974;278.
11. Shanthi E., Banerjee A., Dutta V., Chopra K.L. J. Appl. Phys. 53:1982;1615.
12. Shanthi E., Banerjee A., Chopra K.L. Thin Solid Films. 88:1982;93.
13. Saxena A.K., Thangaraj R., Singh P., Agnihotri O.P. Thin Solid Films. 131:1985;121.
14. Haitjema H., Elich J.J.P., Hoogendoorn C.J. Sol. Energy Mater. 18:1989;283.
15. Ma H.L., Zhang D.H., Win S.Z., Li S.Y., Chen Y.P. Sol. Energy Mater. Sol. Cells. 40:1996;371.
16. Uglov V.V., Rusalsky D.P., Khodasevich V.V., Kholmetskii A.L., Wei R., Vajo J.J., Rumyanceva I.N., Wilbur P.J. Surf. Coat. Technol. 103-104:1998;317.
17. Bredell L.J., van der Berg N.G. Surf. Coat. Technol. 103-104:1998;118.
18. Sanghera H.K., Sullivan J.L. Nucl. Instr. and Meth. B. 152:1999;65.
19. Kukareko V.A., Byeli A.V. Surf. Coat. Technol. 127:2000;174.
20. Senthil K., Mangalaraj D., Narayandass S.K., Kesavamoorthy R., Reddy G.L.N. Nucl. Instr. and Meth. B. 173:2001;475.
21. Zymierska D., Auleytner J., Choinski J., Perchuc L., Godwod K., Domagala J., Adamczewska J., Paszkowicz W., Reginski K. J. Alloys Compd. 328:2001;112.
22. Wendler E., Herrmann U., Wesch W., Dunken H.H. Nucl. Instr. and Meth. B. 116:1996;332.
23. Narayanan K.L., Vijayakumar K.P., Nair K.G.M., Sundarakkannan B., Narasimha Rao G.V., Kesavamoorthy R. Nucl. Instr. and Meth. B. 132:1997;61.
24. Narayanan K.L., Rajaraman R., Valsakumar M.C., Vijayakumar K.P., Nair K.G.M. Opt. Mater. 17:2001;355.
25. Bell J.M., Knight P.C., Johnston G.R. Araujo C.P.D., Scott J.F., Taylor G.W. Ferroelectric Tin Films: Synthesis and Basic Properties. 1996;93 Gordon and Breach Publishers, Amsterdam.
26. Blood P., Orton J.W. March N.H. The Electrical Characterization of Semiconductors: Majority carriers and Electron States. 1992;Academic Press, London.
27. Santhakumar K., Jayavel P., Kesavamoorthy R., Magudapathy P., Nair K.G.M., Ravichandran V. Nucl. Instr. and Meth. B. 194:2002;451.
28. Gerhardinger P.F., Mccurdy R.J. Ginley D., Catalano A., Schock H.W., Eberspacher C., Peterson T.M., Wada T. Thin Films for Photovoltaic and Related Device Applications. 1996;399 Materials Research Society, San Francisco, CA.
29. Von-Rottkay K., Rubin M. Ginley D., Catalano A., Schock H.W., Eberspacher C., Peterson T.M., Wada T. Thin Films for Photovoltaic and Related Device Applications. 1996;449 Materials Research Society, San Francisco, CA.
30. Byeli A.V., Kukareko V.A., Lobodaeva O.V., Wilbur P.J., Davis J.A. Wear. 596:1997;203.
31. Hanamoto K., Sasaki M., Miyatani K., Kaito C., Miki H., Nakayama Y. Nucl. Instr. and Meth. B. 173:2001;287.
32. Haacke G. J. Appl. Phys. 47:1976;4086.