Structural changes induced by fast nitrogen ions in GaAs single crystals

Journal of Alloys and Compounds

Volumn 328, Issue 1-2, 2001, Pages 112-118

  Zymierska, D ^a   Auleytner, J ^a   Choinski J ^a   Perchuc L ^a   Godwod, K ^a   Domagala, J ^a   Adamczewska, J ^a   Paszkowicz, W ^a   Reginski K ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

Fast nitrogen ion implantation; GaAs; Multicrystal diffractometry; Scanning electron microscopy; X ray diffraction

Indexed keywords

CRYSTAL DEFECTS; DIFFRACTOMETERS; ION IMPLANTATION; NITROGEN; NUMERICAL ANALYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

MULTICRYSTAL DIFFRACTOMETRY; STRUCTURAL CHANGES;

SINGLE CRYSTALS;

EID: 0035807481     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(01)01331-7     Document Type: Article

References (39)