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Volumn 67, Issue 9, 2003, Pages

Quantum spin field effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; ELECTRIC POTENTIAL; FLOW KINETICS; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; NANOTECHNOLOGY; QUANTUM CHEMISTRY; QUANTUM MECHANICS; SEMICONDUCTOR; SENSITIVITY ANALYSIS; SPIN FIELD EFFECT TRANSISTOR; THEORY;

EID: 0037367973     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.092408     Document Type: Article
Times cited : (188)

References (33)
  • 2
    • 0035900398 scopus 로고    scopus 로고
    • For recent reviews on spintronics, see, for example
    • For recent reviews on spintronics, see, for example, S A. Wolf, Science294, 1488 (2001);
    • (2001) Science , vol.294 , pp. 1488
    • Wolf, S.A.1
  • 3
  • 31
    • 85038268074 scopus 로고    scopus 로고
    • Consider just a single lead connected to the scattering region. Due to the rotating field, an incoming spin-down electron (plays the role of an electron in the NS case) is flipped up and flows out as spin-up (plays the role of a hole in the NS case). This process is analogous to Andreev reflection
    • Consider just a single lead connected to the scattering region. Due to the rotating field, an incoming spin-down electron (plays the role of an electron in the NS case) is flipped up and flows out as spin-up (plays the role of a hole in the NS case). This process is analogous to Andreev reflection.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.