A three-dimensional TLM simulation method for thermal effect in high power insulated gate bipolar transistors

Microelectronic Engineering

Volumn 65, Issue 3, 2003, Pages 293-306

  Hocine, R ^a   Boudghene Stambouli, A ^a   Saidane, A ^b  

^a UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

^b NATIONAL POLYTECHNIC SCHOOL OF ORAN   (Algeria)

Author keywords

Ceramic; Diffusion; Heat source elements; Heat spreader; IGBT; Metal Matrix Composite material; Module; Nodes; Thermal

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRIC LINES; HEAT LOSSES; METALLIC MATRIX COMPOSITES; POWER ELECTRONICS; SUBSTRATES; THERMAL EFFECTS; THERMOANALYSIS;

TRANSMISSION LINE MATRIX METHOD (TLM);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0037363285     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00903-6     Document Type: Article

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