Material requirements for high voltage, high power IGBT devices

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2139-2151

  Zehringer, R ^a   Stuck, A ^a   Lang, T ^b  

^a ABB CORPORATE RESEARCH   (Switzerland)

^b ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; GATES (TRANSISTOR); POWER ELECTRONICS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032304411     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00209-3     Document Type: Article

References (14)

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