Static and dynamic thermal characteristics of IGBT power modules

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 37-40

  Yun, Chan Su ^a   Regli, Peter ^a   Waldmeyer, Jurg ^a   Fichtner, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION LOSSES; DIRECT COPPER BONDING; INSULATED GATE BIPOLAR TRANSISTORS; POWER MODULES; SOLDER SIZE EFFECTS; STEADY STATE PERIODIC CONDITION; SWITCHING LOSSES; THERMAL CHARACTERISTICS; THERMAL INTERFERENCE;

BIPOLAR TRANSISTORS; BONDING; ELECTRIC LOSSES; FINITE ELEMENT METHOD; HEAT RESISTANCE; PULSE WIDTH MODULATION; SOLDERED JOINTS; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; THERMOANALYSIS; THERMODYNAMIC PROPERTIES;

POWER ELECTRONICS;

EID: 0032598944     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)