Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1353-1359

  Hamidi, A ^a,c   Coquery, G ^a   Lallemand, R ^a   Vales, P ^b   Dorkel, J M ^b  

^a INRETS   (France)

^b LAAS CNRS   (France)

^c ABB CORPORATE RESEARCH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC TRACTION; ELECTRONICS PACKAGING; FAILURE ANALYSIS; MATHEMATICAL MODELS; RELIABILITY; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; THERMAL CYCLING; THERMAL STRESS; THERMOANALYSIS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); THERMAL SIMULATION;

MULTICHIP MODULES;

EID: 0032083873     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00134-6     Document Type: Article

References (5)

1. th SEMITHERM symp. 1986.
2. Dorkel J.M, Tounsi P and Leturcq P. 3D Thermal modeling based on the two-port network theory for hybrid or monolithic integrated power circuits. IEEE Trans. Components, Packaging and Manufacturing Technology, part A, vol. 19, no 4, 1996, pp 501-507.
3. Hamidi A and Coquery G. Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions. ESREF, 1997, pp 1755-1758.
4. Hamidi A, Coquery G and Lallemand R. Reliability of high power IGBT modules - Testing on thermal fatigue effects due to traction cycles. EPE, 1997, pp 3118-3123.
5. Jacob P, Held M Scacco P and Wu W. Reliability testing and analysis of IGBT power semiconductor modules. IEE proc. IGBT propulsion drives, London, 1995, pp 4/1-4/5.