Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 12, 1998, Pages 7795-7798

  Holden, Todd ^a   Sun, W ^a   Pollak, Fred H ^a   Freeouf, J ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b Interface Studies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012711458     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.7795     Document Type: Article

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