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Journal of the Electrochemical Society

Volumn 150, Issue 3, 2003, Pages

Effect of surface treatment on Schottky barrier height of p-type GaN

(2) Kim, Jong Kyu a Lee, Jong Lam a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION; CRYSTAL ATOMIC STRUCTURE; ELECTRIC RESISTANCE; FERMI LEVEL; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SURFACE TREATMENT; SYNCHROTRON RADIATION;

AQUA REGIE TREATMENT; PINNING; SCHOTTKY BARRIER HEIGHT; SHEET RESISTANCE; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 0037348920 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1544637 Document Type: Article

Times cited : (68)

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