Nanofabrication of a sub-wavelength size aperture using anisotropic inductively coupled plasma processing

Nanotechnology

Volumn 14, Issue 3, 2003, Pages 397-401

  Choi, S S ^a   Jung, M Y ^a   Kim, D W ^a   Kim, J W ^b   Boo, J H ^b   Yang, J S ^c  

^a SunMoon University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SILICA;

ANISOTROPIC ETCHING;

NANOTECHNOLOGY;

EID: 0037347612     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/3/308     Document Type: Article

References (15)

1. Davis R C, Williams C C and Neuzil P 1995 Appl. Phys. Lett. 66 2309
2. Ruiter A G T, Moers M H P, van Hulst N F and de Boer M 1996 J. Vac. Sci. Technol. B 14 597
3. Mihalcea C, Scholz W, Werner S, Munster S, Oesterschulze E and Kassing R 1996 Appl. Phys. Lett. 68 3531
4. Partovi A, Peale D, Wuttig M, Murray C A, Zydzik G, Hopkins L, Baldwin K, Hopson W S, Wynn J, Lopata J, Dhar L, Chichester R and Yeh J H 1999 Appl. Phys. Lett. 75 1516
5. Martin Y, Rishton S and Wickramasinghe H K 1997 Appl. Phys. Lett. 71 1
6. Betzig E, Trautman J K, Wolfe R, Gyory E M, Finn P L, Kryder M H and Chang C H 1992 Appl. Phys. Lett. 61 142
7. Mitsuhashi Y 1998 Japan. J. Appl. Phys. 37 2079
8. Jung M Y, Lyo I W, Kim D W and Choi S S 2000 J. Vac. Sci. Technol. A 18 1333
9. Lee J W, Choi S S, Kim J W, Jung M Y and Kim D W 2000 J. Korean Vac. Soc. 9 99
10. Jung M Y, Lee J W, Kim J W, Kim D W and Choi S S 2000 Proc. European Surface Science Mtg (Madrid, Spain, Sept. 2000)
11. Seidel H, Csepregi L, Heuberger A and Baumgartel H 1990 J. Electrochem. Soc. 137 3612
12. Kovacs G T A, Maluf N I and Peterson K E 1998 Proc. IEEE 86 1536
13. Bustillo J M, Howe R T and Miller R S 1998 Proc. IEEE 86 1552
14. Kao D B, McVittie J P, Nix W D and Saraswat K C 1988 IEEE Trans. Electron Devices 35 25
15. Winters H F and Coburn J W 1985 J. Vac. Sci. Technol. B 3 1376