Density-of-states distribution in AlGaN obtained from transient photocurrent analysis

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 206-208

  Niehus, M ^a   Schwarz, R ^a   Koynov, S ^a   Heuken, M ^b   Meister, D ^c   Meyer, B K ^c   Main, C ^d   Reynolds, S ^d  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b AIXTRON AG   (Germany)

^c JUSTUS LIEBIG UNIVERSITY   (Germany)

^d UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

Author keywords

AlGaN; Deep defects; Density of states; PPC; Transient photocurrent

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; PHOTOCURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS;

DENSITY OF STATE DISTRIBUTION; TRANSIENT PHOTOCURRENTS;

SEMICONDUCTING FILMS;

EID: 0035933005     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00773-X     Document Type: Article

References (5)