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Volumn 18, Issue 3, 2003, Pages

The diamond-vacuum interface: I. A model of the interface between an n-type semiconductor, with negative electron affinity, and the vacuum

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC FIELD EFFECTS; INTERFACES (MATERIALS); QUANTUM THEORY; SCHOTTKY BARRIER DIODES; VACUUM APPLICATIONS;

EID: 0037338848     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/3/318     Document Type: Article
Times cited : (6)

References (24)
  • 13
    • 0000118454 scopus 로고    scopus 로고
    • ed J L Davidson, J C Angus, W D Brown, A Gicquel, B V Spitsyn, G M Swain and W B Kang (Pennington, NJ: Electrochemical Society)
    • Nemanich R J, Köch F A M, English S L and Sowers A T 2000 Diamond Materials VI ed J L Davidson, J C Angus, W D Brown, A Gicquel, B V Spitsyn, G M Swain and W B Kang (Pennington, NJ: Electrochemical Society) pp 206-15
    • (2000) Diamond Materials , vol.6 , pp. 206-215
    • Nemanich, R.J.1    Köch, F.A.M.2    English, S.L.3    Sowers, A.T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.