Behavior of electron emission from phosphorus-doped epitaxial diamond films

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 759-762

  Kimura, Chiharu ^a   Koizumi, Satoshi ^b   Kamo, Mutsukazu ^b   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Electron injection; Field emission; Homoepitaxial diamond; Phosphorus doping

Indexed keywords

ANODES; CATHODES; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF GASES; ELECTRIC POTENTIAL; ELECTRON EMISSION; EPITAXIAL GROWTH; FILM GROWTH; MICROWAVES; PHOSPHORUS; PLASMA APPLICATIONS;

FIELD ELECTRON EMISSION (FEE); HOMOEPITAXIAL GROWTH;

DIAMOND FILMS;

EID: 0032614260     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00340-9     Document Type: Article

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