Photoreflectance and surface photovoltage spectroscopy characterisation of an InGaP/InGaAsN/GaAs NpN DHBT structure

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 99-101

  Huang, Y S ^a   Lin, C J ^a   Wang, C H ^b   Li, N Y ^b   Fan, C C ^c   Li, P W ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Kingmax Optoelectronics Inc   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CIRCUIT OSCILLATIONS; ELECTRIC FIELDS; ENERGY GAP; HETEROJUNCTIONS; LIGHT POLARIZATION; LIGHT REFLECTION; MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; INDIUM GALLIUM PHOSPHIDE; PHOTOREFLECTANCE; SCREENING EFFECT; SURFACE PHOTOVOLTAGE SPECTROSCOPY;

BIPOLAR TRANSISTORS;

EID: 0037304579     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030044     Document Type: Article

References (16)

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