Comparative low frequency noise analysis in various SOI devices: Floating body, body-tied, DTMOS with and without current limiter

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 126-127

  Haendler, S ^a   Jomaah, J ^a   Balestra, F ^a   Pelloie, J L ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LIMITERS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

LOW FREQUENCY NOISE (LFN);

MOSFET DEVICES;

EID: 0034470989     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)