Prediction of the critical dimensions by using a threshold energy resist model

Journal of the Korean Physical Society

Volumn 42, Issue 2, 2003, Pages 191-195

  Yoo, Ji Yong ^a   Kwon, Young Keun ^a   Park, Jun Taek ^a   Sohn, Dong Soo ^a   Kim, Sang Gon ^a   Sohn, Young Su ^a   Oh, Hye Keun ^a   Han, Woo Sung ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

248 nm; Aerial image; Lithography; OPC; Resist model; Simulation

Indexed keywords

EID: 0037298368     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

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