Gated molecular devices using self-assembled monolayers

Nanotechnology

Volumn 14, Issue 2, 2003, Pages 254-257

  Zhitenev, N B ^a   Erbe, A ^a   Meng, H ^a   Bao, Z ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON DEVICES; MOLECULAR PHYSICS; MOLECULAR VIBRATIONS; RESONANT TUNNELING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

GATE VOLTAGE; GATED MOLECULAR DEVICES; METAL MOLECULE METAL JUNCTIONS; SELF ASSEMBLED MONOLAYERS; SOURCE DRAIN VOLTAGE;

NANOTECHNOLOGY;

EID: 0037292765     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/2/329     Document Type: Article

References (20)

1. Donhauser Z J et al 2001 Science 292 2303-7
2. Cui X D et al 2001 Science 294 571-4
3. Datta S et al 1997 Phys. Rev. Lett. 79 2530-3
4. Reed M A et al 1997 Science 278 252-4
5. Kergueris C et al 1999 Phys. Rev. B 59 12505-13
6. Porath D et al 2000 Nature 403 635-8
7. Park H et al 2000 Nature 407 57-60
8. Chen J et al 1999 Science 286 1550-2
9. Schön J H et al 2001 Nature 413 713-15
10. Collier C P et al 2000 Science 289 1172-5
11. Yoo M J et al 1997 Science 276 579-82
12. Grabert H and Devoret M H 1992 Single Charge Tunnelling (New York: Plenum)
13. Birnbaum D and Kohler B E 1989 J. Chem. Phys. 90 3506-8
14. Birnbaum D and Kohler B E 1992 J. Chem. Phys. 96 165-7
15. Jaklevic R C and Lambe J 1966 Phys. Rev. Lett. 17 1139-40
16. Stipe B C et al 1998 Science 280 1732-5
17. Persson B N J and Baratoff A 1987 Phys. Rev. Lett. 59 339-42
18. Gata M A and Antoniewicz P A 1993 Phys. Rev. B 47 13797-807
19. Ishida T et al 1999 J. Phys. Chem. B 103 1686-90
20. Frey S et al 2001 Langmuir 17 2408-15