Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 397-404

  Pan, N ^a   Welser, R E ^a   Lutz, C R ^a   DeLuca, P M ^a   Han, B ^a   Hong, K ^b  

^a KOPIN CORPORATION   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Arsenates; B1. Phosphides; B2. Semiconducting III V materials; B3. Bipolar transistors

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ARSENATES; PHOSPHIDES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0035334340     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00893-4     Document Type: Conference Paper

References (5)

1. Present status and future needs