Saturation of hole concentration in carbon-doped GaAs grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 182, Issue 1-2, 1997, Pages 30-36

  Watanabe, Noriyuki ^a   Ito, Hiroshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Carbon doping; Carbon tetrabromide (CBr4); GaAs; MOCVD; Saturated concentration

Indexed keywords

DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

CARBON TETRABROMIDE; HOLE CONCENTRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031374154     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00333-3     Document Type: Article

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