Heavily carbon-doped GaAs grown by MOVPE using carbon tetrabromide for HBTs

Materials Research Bulletin

Volumn 31, Issue 1, 1996, Pages 97-105

  Wu, Huizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A. semiconductors; B. epitaxial growth; D. crystal structure; D. electrical properties

Indexed keywords

BERYLLIUM; CARBON; CRYSTAL GROWTH; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; ZINC;

CARBON DOPED GALLIUM ARSENIDE; CARBON TETRABROMIDE; DOUBLE CRYSTAL X RAY DIFFRACTION; HOLE MOBILITIES; LATTICE CONTRACTION; LATTICE MISMATCH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029754416     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/0025-5408(95)00171-9     Document Type: Article

References (20)

1. L.W. Yang, P.D. Wright, P.R. Brusenback, S.K. Ko, and A. Kaleta, Electronics Lett. 27, 1145 (1991).
2. M. C. Hanna, Z. H. Lu, and A. Majerfeld, Appl. Phys. Lett., 58, 164 (1991).
3. L.W. Yang, P.D. Wright, and V. Eu, Z.H. Lu, and A Majerfeld, J. Appl. Phys. 72, 2063 (1992).
4. S.A. Stockman, G.E. Hofler, J.N. Baillargeon, K. C. Hsieh, K.Y. Cheng, and G.E. Stillman, J. Appl. Phys. 72, 981 (1992).
5. Y.M. Houng, S.D. Lester, D.E. Mars, and J.N. Miller, J. Vac. Sci. Technol. B 11, 915 (1993).
6. U. Strauss, A.P. Herberle, X. Q. Zhou, W.W. Ruhle, T. Lauterbach, K.H. Bachem, and N.M. Haegel, Jpn. J. Appl. Phys. 32, 495 (1993).
7. T. F. Kuech, M. A. Tischler, P. J. Wang, G. Scilla, R. Potemski, and F. Cardone, Appl. Phys. Lett. 53, 1317 (1988).
8. Y.-M. Hong, S.D. Lester, D.E. Mars, and J.N. Miller, J. Vac. Sci. Technol. B 11, 915 (1993).
9. C.R. Abernathy, S.J. Pearton, R. Caruso, F. Ren, and J. Kovalchik, Appl. Phys. Lett. 55, 1750 (1990).
10. N.J. Buchan, T.F. Keuch, S. Scilla, and F. Cardone, J. Cryst. Growth 110, 405 (1991).
11. K. Zhang, W.-Y. Hwang, and D.L. Miller, Appl. Phys. Lett. 63, 2399 (1993).
12. H. Wu, J. Appl. Phys. (to be published).
13. P.F. Fewster, Analysis of Microelectronic Materials and Devices, ed, M. Grasserbauer and H.W. Werner, p. 581, Wiley & Sons (1991).
14. T.J. de Lyon, J.M. Woodall, M.S. Goorsky, and P.D. Kirchner, Appl. Phys. Lett. 56, 1040 (1990).
15. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
16. C.R. Abernathy, S.J. Pearton, M.O. Manasrheh, D.W. Fisher, and D.N. Talwar, Appl. Phys. Lett. 57, 294 (1990).
17. C.R. Abernathy, S.J. Pearton, R. Caroso, F. Ren, and J. Kovalchik, Appl. Phys. Lett. 55, 1750 (1989).
18. K. Ploog, A. Fisher, and H. Kunzel, J. Electrochem. Soc. 128, 400 (1981).
19. K. Saito, E. Tokumitsu, T. Akatsuka, M. Miyauchi, T. Yamada, M. Konagai, and K. Takahashi, J. Appl. Phys. 64, 3975 (1988).
20. J.D. Wiley, Semiconductors and Semimetals, Vol. 10, ed. R.K. Willardson and A.C. Beer, p. 91, Academic Press, New York (1975).