Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 914-916

  MacLean, J O ^a   Martin, T ^a   Houlton, M R ^a   Calcott, P D J ^a   Ayling, S G ^a   Hilton, K P ^a   Rushworth, S A ^b   Smith, L M ^b  

^a QINETIQ   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

II-IV SEMICONDUCTORS; INGAAS/GAAS; LIFETIME MEASUREMENTS; LOW TEMPERATURES; LOW THRESHOLDS; METAL-ORGANIC VAPOR PHASE EPITAXY; NONRADIATIVE CENTERS; OPTICAL CAVITIES; PL LIFETIME; PURIFICATION PROCESS; QUANTITATIVE COMPARISON; THRESHOLD CURRENTS; TRIMETHYLINDIUM; TWO STAGE; VERY LOW TEMPERATURES;

CHEMICAL COMPOUNDS; EPITAXIAL GROWTH; PURIFICATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS;

CHEMICAL BEAM EPITAXY;

EID: 79956060599     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1435806     Document Type: Article

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