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Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 302-304

Optically pumped integrated absorber 3.4 μm laser with InAs-to-InGaAsSb type-II transition

(7) Kaspi, R a Ongstad, A a Moeller, C a Dente, G C b Chavez, J c Tilton, M L c Gianardi, D c

a AIR FORCE RESEARCH LABORATORY (United States)

b GCD Associates (United States)

c BOEING COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; OPTICAL WAVEGUIDES; POISSON EQUATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

INTEGRATED ABSORBER STRUCTURES;

OPTICALLY PUMPED LASERS;

EID: 0035898496 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1385581 Document Type: Article

Times cited : (23)

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