Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 487-493

  Paszkiewicz, R ^a   Paszkiewicz, B ^a   Kozlowski, J ^a   Piasecki, M ^a   Kosnikowski, W ^a   Tlaczala, M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A1. Characterization; A1. High resolution X ray diffraction; A1. Impedance spectroscopy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CHARACTERIZATION; CRYSTALLOGRAPHY; GRAIN SIZE AND SHAPE; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

IMPEDANCE SPECTROSCOPY;

NITRIDES;

EID: 0037291343     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01815-8     Document Type: Conference Paper

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