Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3359-3361

  Jordan, C ^a   Donegan, J F ^a   Hegarty, J ^a   Roycroft, B J ^a   Taniguchi, S ^b   Hino, T ^b   Kato, E ^b   Noguchi, N ^b   Ishibashi, A ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

BAND-TO-BAND RECOMBINATION COEFFICIENT; BIMOLECULAR RECOMBINATION MODEL; RATE EQUATION MODEL; SHOCKLEY-READ-HALL RATE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032606389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123344     Document Type: Article

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