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Volumn 120, Issue 9-10, 2001, Pages 343-346
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Strain dependence and deformation potential of the E1 and E1+Δ1 transitions of ZnTe grown on a GaAs (001) substrate
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Author keywords
A. Semiconductors; A. Thin films; B. Epitaxy; D. Optical properties; E. Light absorption and reflection
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Indexed keywords
DEFORMATION;
ELLIPSOMETRY;
ENERGY GAP;
EPITAXIAL GROWTH;
LIGHT ABSORPTION;
LIGHT REFLECTION;
OPTICAL PROPERTIES;
SEMICONDUCTING GALLIUM ARSENIDE;
STRAIN;
SUBSTRATES;
THIN FILMS;
ZINC COMPOUNDS;
EPITAXIAL FILMS;
SEMICONDUCTING FILMS;
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EID: 0035798294
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1098(01)00416-1 Document Type: Article |
Times cited : (4)
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References (19)
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