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Volumn 120, Issue 9-10, 2001, Pages 343-346

Strain dependence and deformation potential of the E1 and E1+Δ1 transitions of ZnTe grown on a GaAs (001) substrate

Author keywords

A. Semiconductors; A. Thin films; B. Epitaxy; D. Optical properties; E. Light absorption and reflection

Indexed keywords

DEFORMATION; ELLIPSOMETRY; ENERGY GAP; EPITAXIAL GROWTH; LIGHT ABSORPTION; LIGHT REFLECTION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; SUBSTRATES; THIN FILMS; ZINC COMPOUNDS;

EID: 0035798294     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00416-1     Document Type: Article
Times cited : (4)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.