Preparation of phosphorous dope beta-irondisilicide thin films and application for devices

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 353-356

  Ehara, Takashi ^a   Nakagomi, Shinji ^a   Kokubun, Yoshihiro ^a  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

Beta irondisilicide; Heterojunction; Phosphorous doping; Silicon

Indexed keywords

HETEROJUNCTIONS; LEAKAGE CURRENTS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPUTTERING; THERMOELECTRICITY;

THERMOELECTRIC POWER MEASUREMENTS;

THIN FILMS;

EID: 0037290351     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00219-8     Document Type: Conference Paper

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