Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 231-235

  Ito, Akira ^a   Muranaka, Tsutomu ^a   Jiang, Chao ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Atomic hydrogen; Binary decision diagram; InGaAs ridge quantum wire; Selective MBE

Indexed keywords

GAS ADSORPTION; HYDROGEN; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

BINARY-DECISION DIAGRAMS (BDD);

SEMICONDUCTOR QUANTUM WIRES;

EID: 0037042053     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00881-9     Document Type: Conference Paper

References (8)