Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy

Review of Scientific Instruments

Volumn 74, Issue 1 II, 2003, Pages 575-577

  Okamoto, Koichi ^a,c   Inoue, Kenichi ^a   Kawakami, Yoichi ^a   Fujita, Shigeo ^a   Terazima, Masahide ^a   Tsujimura, Ayumu ^b   Kidoguchi, Isao ^b  

^a KYOTO UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; NEODYMIUM LASERS; OPTICAL FIBERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; THERMAL CONDUCTIVITY;

NONRADIATIVE RECOMBINATION PROCESSES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037286084     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519666     Document Type: Conference Paper

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