Failure analysis of high power GaAs-based lasers using electron beam induced current analysis and transmission electron microscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 2, 1998, Pages 825-829

  Mallard, R E ^a   Clayton, R ^a   Mayer, D ^a   Hobbs, L ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRON BEAMS; ION BEAMS; LASER PULSES; MELTING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

CATASTROPHIC OPTICAL DAMAGE; CURRENT VERSUS LIGHT OUTPUT CHARACTERISTICS; DARK RIDGE DEFECTS; ELECTRON BEAM INDUCED CURRENT; FOCUSED ION BEAM; LASER CAVITY; PUMP LASER;

SEMICONDUCTOR LASERS;

EID: 0032028820     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581066     Document Type: Article

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