-
1
-
-
0029516201
-
CMOS image sensors: Electronic camera-on-a-chip
-
E. R. Fossum, "CMOS image sensors: electronic camera-on-a-chip," in IEDM Tech. Dig., 1995, pp. 17-25.
-
(1995)
IEDM Tech. Dig.
, pp. 17-25
-
-
Fossum, E.R.1
-
3
-
-
0031079143
-
CMOS active pixel image sensors for highly integrated imaging systems
-
Feb.
-
S. K. Mendis, S. E. Kemeny, R. C. Gee, B. Pain, Q. Kim, and E. R. Fossum, "CMOS active pixel image sensors for highly integrated imaging systems," IEEE J. Solid-State Circuits, vol. 32, pp. 187-197, Feb. 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 187-197
-
-
Mendis, S.K.1
Kemeny, S.E.2
Gee, R.C.3
Pain, B.4
Kim, Q.5
Fossum, E.R.6
-
4
-
-
0030414362
-
256 × 256 CMOS active pixel sensor camera-on-a-chip
-
Dec.
-
R. H. Nixon, S. E. Kemeny, B. Pain, C. O. Staller, and E. R. Fossum, "256 × 256 CMOS active pixel sensor camera-on-a-chip," IEEE J. Solid-State Circuits, vol. 31, pp. 2046-2050, Dec. 1996.
-
(1996)
IEEE J. Solid-State Circuits
, vol.31
, pp. 2046-2050
-
-
Nixon, R.H.1
Kemeny, S.E.2
Pain, B.3
Staller, C.O.4
Fossum, E.R.5
-
5
-
-
0034854987
-
CCD or CMOS image sensors for consumer digital still photography?
-
J. P. Albert Theuwissen, "CCD or CMOS image sensors for consumer digital still photography?," presented at the 2001 Int. Symp. on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, R.O.C., Apr. 2001, pp. 168-171.
-
2001 Int. Symp. on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, R.O.C., Apr. 2001
, pp. 168-171
-
-
Albert Theuwissen, J.P.1
-
6
-
-
0031249402
-
CMOS image sensors: Electronic camera-on-a-chip
-
Oct.
-
E. R. Fossum, "CMOS image sensors: electronic camera-on-a-chip," IEEE Trans. Electron Devices, vol. 44, pp. 1689-1698, Oct. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1689-1698
-
-
Fossum, E.R.1
-
7
-
-
84886448069
-
CMOS image sensors - Recent advances and device scaling considerations
-
H. S. P. Wong, "CMOS image sensors - Recent advances and device scaling considerations," in IEDM Tech. Dig., 1997, pp. 201-204.
-
(1997)
IEDM Tech. Dig.
, pp. 201-204
-
-
Wong, H.S.P.1
-
8
-
-
0031079143
-
CMOS active pixel image sensors for highly integrated imaging systems
-
Feb.
-
S. K. Mendis, S. E. Kemeny, R. C. Gee, B. Pain, Q. Kim, and E. R. Fossum, "CMOS active pixel image sensors for highly integrated imaging systems," IEEE J. Solid-State Circuits, vol. 32, pp. 187-197. Feb. 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 187-197
-
-
Mendis, S.K.1
Kemeny, S.E.2
Gee, R.C.3
Pain, B.4
Kim, Q.5
Fossum, E.R.6
-
9
-
-
66549085580
-
An active pixel sensor fabricated using CMOS/CCD process technology
-
P. Lee, R. Gee, M. Guidash, T. Lee, and E. R. Fossum. An active pixel sensor fabricated using CMOS/CCD process technology, presented at 1995 IEEE Workshop on CCDs and Advanced Image Sensors
-
1995 IEEE Workshop on CCDs and Advanced Image Sensors
-
-
Lee, P.1
Gee, R.2
Guidash, M.3
Lee, T.4
Fossum, E.R.5
-
10
-
-
0001178444
-
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology
-
Apr.
-
H. S. P. Wong, R. T. Chang, E. Crabbe, and P. D. Agnello, "CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology," IEEE Trans. Electron Devices, vol. 45, pp. 889-894, Apr. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 889-894
-
-
Wong, H.S.P.1
Chang, R.T.2
Crabbe, E.3
Agnello, P.D.4
-
11
-
-
33747138566
-
Progress in CMOS active pixel image sensors
-
S. Mendis, S. E. Kemeny, R. Gee, B. Pain, and E. R. Fossum, "Progress in CMOS active pixel image sensors," Proc. SPIE, vol. 2172, pp. 19-29, 1994.
-
(1994)
Proc. SPIE
, vol.2172
, pp. 19-29
-
-
Mendis, S.1
Kemeny, S.E.2
Gee, R.3
Pain, B.4
Fossum, E.R.5
-
12
-
-
0033115597
-
A 600-dpi capacitive finger-print sensor chip and image synthesis technique
-
J. Woo, D. J. Min, J. Kim, and W. Kim, "A 600-dpi capacitive finger-print sensor chip and image synthesis technique," IEEE J. Solid-State Circuits, vol. 34, pp. 469-475, 1999.
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, pp. 469-475
-
-
Woo, J.1
Min, D.J.2
Kim, J.3
Kim, W.4
-
13
-
-
0033908678
-
Performance analysis of a color CMOS photogate image sensor
-
Jan.
-
A. J. Blanksby and M. J. Loinaz, "Performance analysis of a color CMOS photogate image sensor," IEEE Trans. Electron Devices, pp. 55-64. Jan. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 55-64
-
-
Blanksby, A.J.1
Loinaz, M.J.2
-
14
-
-
24244436218
-
Properties and design optimization of photodiodes available in a current CMOS technology
-
W. Zhang and M. Chan, "Properties and design optimization of photodiodes available in a current CMOS technology," in Proc. IEEE Hong Kong Electron Devices Meeting, 1998, pp. 22-25.
-
Proc. IEEE Hong Kong Electron Devices Meeting, 1998
, pp. 22-25
-
-
Zhang, W.1
Chan, M.2
-
15
-
-
0032138127
-
Accurate extraction of reverse leakage current components of shallow silicided p+-n junction for quarter and subquarter-micron MOSFETs
-
Aug.
-
H. D. Lee and J. M. Hwang, "Accurate extraction of reverse leakage current components of shallow silicided p+-n junction for quarter and subquarter-micron MOSFETs," IEEE Trans. Electron Devices, vol. 45, pp. 1848-1850, Aug. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 1848-1850
-
-
Lee, H.D.1
Hwang, J.M.2
-
16
-
-
0026124109
-
Material and electrical properties of ultra-shallow p+-n junctions formed by low-energy ion implantation and thermal annealing
-
S. N. Hong, G. A. Ruggles, J. J. Wortman, and M. C. Ozturk, "Material and electrical properties of ultra-shallow p+-n junctions formed by low-energy ion implantation and thermal annealing," IEEE Trans. Electron Devices, vol. 38, pp. 476-486, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 476-486
-
-
Hong, S.N.1
Ruggles, G.A.2
Wortman, J.J.3
Ozturk, M.C.4
-
17
-
-
0028255523
-
Impact of structure enhanced defects multiplication in junction leakage
-
B. Y. Tsui, Y. F. Hsieh, and C. H. Chang, "Impact of Structure Enhanced Defects Multiplication in Junction Leakage," in IEEE IRPS Tech. Dig., 1994, pp. 383-384.
-
(1994)
IEEE IRPS Tech. Dig.
, pp. 383-384
-
-
Tsui, B.Y.1
Hsieh, Y.F.2
Chang, C.H.3
-
18
-
-
0029518369
-
A new leakage component caused by the interaction of residual stress and the relative position of poly-Si gate at isolation edge
-
H. Lee, Y. Huh, J. S. Goo, S. D. Lee, D. Yang, and W. Kim, "A new leakage component caused by the interaction of residual stress and the relative position of poly-Si gate at isolation edge," in IEDM Tech. Dig., 1995, pp. 683-686.
-
(1995)
IEDM Tech. Dig.
, pp. 683-686
-
-
Lee, H.1
Huh, Y.2
Goo, J.S.3
Lee, S.D.4
Yang, D.5
Kim, W.6
-
19
-
-
0034317115
-
Sensitivity of CMOS based imager and scaling perspectives
-
T. Lule, S. Benthien, H. Keller, F. Mutze, P. Rieve, K. Seibel, M. Sommer, and M. Bohm, "Sensitivity of CMOS based imager and scaling perspectives," IEEE Trans. Electron Devices, vol. 47, pp. 2110-2122, 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 2110-2122
-
-
Lule, T.1
Benthien, S.2
Keller, H.3
Mutze, F.4
Rieve, P.5
Seibel, K.6
Sommer, M.7
Bohm, M.8
|