Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 1073-1077

  Yuan, Z L ^a   Xu, Z Y ^a   Zheng, B Z ^a   Luo, C P ^a,c   Xu, J Z ^a   Ge, Weikun ^b   Zhang, P H ^a   Yang, X P ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EXCITONS; HEAT TRANSFER; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ALUMINUM GALLIUM ARSENIDE; EXCITON LOCALIZATION; GROWTH INTERRUPTION; LOCALIZATION ENERGY; LUMINESCENCE DECAY; MULTIPLET STRUCTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029753407     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360896     Document Type: Article

References (20)

1. T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, S. Yano, and T. Hijikata, Appl. Phys. Lett. 47, 952 (1985).
2. C. W. Tu, R. C. Miller, B. A. Wilson, P. M. Petroff, T. D. Harris, S. K. Sputz, and M. C. Lamount, J. Cryst. Growth 81, 159 (1987).
3. B. Orschel, G. Oelgart, and R. Houdre, Appl. Phys. Lett. 62, 843 (1993).
4. D. Gammon, B. V. Shanabrook, and D. S. Katzer, Phys. Rev. Lett. 67, 1547 (1991).
5. A. Ourmazd, D. W. Taylor, J. Cunningham, and C. W. Tu, Phys. Rev. Lett. 62, 933 (1989).
6. C. A. Warwick, W. Y. Jan, A. Ourmazd, and T. D. Harris, Appl. Phys. Lett. 56, 2666 (1990).
7. C. A. Warwick and R. F. Kopt, Appl. Phys. Lett. 60, 386 (1992).
8. J. C. Woo, S. J. Rhee, Y. M. Kim, H. S. Ko, and W. S. Kim, Appl. Phys. Lett. 66, 338 (1995).
9. G. Bastard, C. Delalande, M. H. Meynadier, P. M, Frijlink, and M. Voos, Phys. Rev. B 29, 7042 (1984).
10. Z. Y. Xu and M. Gal, J. Lumin. 50, 153 (1991).
11. C. Delalande, M. H. Meynadier, and M. Voos, Phys. Rev. B 31, 2491 (1985).
12. Z. L. Yuan, Z. Y. Xu, J. Z. Xu, Z. B. Zheng, C. P. Luo, X. P. Yang, and P. H. Zhang, Acta Phys. Sin. (overseas edition) 4, 523 (1995).
13. T. Fukunaga, K. L. I. Kobayashi, and H. Nakashima, Jpn. J. Appl. Phys. 24, L414 (1985).
14. X. Liu, S. Nilsson, L. Samuelson, W. Seifert, and P. L. Souza, Phys. Rev. B 47, 2203 (1993).
15. B. Deveaud, T. C. Damen, J. Shah, and C. W. Tu, Appl. Phys. Lett. 51, 828 (1987).
16. U. Jahn, K. Fujiwara, J. Menniger, and H. T. Grahn, J. Appl. Phys. 77, 396 (1995).
17. J. Singh and K. K. Bajaj, Appl. Phys. Lett. 44, 1075 (1984).
18. J. Feldmann, G. Peter, E. O. Gobel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliot, Phys. Rev. Lett. 59, 2337 (1987).
19. Z. L. Yuan and Z. Y. Xu (unpublished).
20. M. Kohl, D. Heitmann, S. Tarucha, K. Leo, and K. Ploog, Phys. Rev. B 39, 7736 (1989).