Fabrication and characterization of Schottky barrier diodes with tetracyanoquinodimethane doped with bis(β-naphthyl)-tetrathiafulvalene

Synthetic Metals

Volumn 82, Issue 2, 1996, Pages 97-101

  Bastien, J ^a   Assadi, A ^a   Soderholm S ^a   Hellberg, J ^a   Moge, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Bis( naphthyl) tetrathiafulvalene; Doping; Schottky barrier diodes; Tetracyanoquinomethane

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CHARACTERIZATION; CHARGE CARRIERS; ELECTRIC CONTACTS; FABRICATION; GOLD; ORGANIC CONDUCTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; VAPOR DEPOSITION;

BIS NAPHTHYL TETRATHIAFULVALENE; CHARGE MIGRATION; PHYSICAL VAPOR DEPOSITION; TETRACYANOQUINOMETHANE;

SCHOTTKY BARRIER DIODES;

EID: 0042039501     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(97)80041-0     Document Type: Article

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